DocumentCode :
2327823
Title :
Design and implementation of ultra low bias current high efficiency PFM mode DC-DC boost regulator
Author :
Ahmed, Khondker Zakir ; Bari, Syed Mustafa Khelat ; Islam, Didar ; Rashid, A. B M Harun-ur
Author_Institution :
East West Univ., Dhaka, Bangladesh
fYear :
2010
fDate :
18-20 Dec. 2010
Firstpage :
454
Lastpage :
457
Abstract :
This paper presents the design and implementation of a low voltage DC-DC asynchronous boost regulator that works in PFM (Pulse Frequency Modulation) mode. The booster is designed to supply low load condition (up to 20 mA) with high efficiency. The total bias current of the chip is only 5 μA when operating with 1 mA load and the number goes to maximum of 18 μA with maximum load condition (20 mA). The ultra low bias current enables the chip to maximize its efficiency in the entire load range. The chip features on-chip over current protection scheme and thermal protection scheme. The boost regulator is implemented in 0.5 μm BiCMOS process technology. The maximum measured efficiency of the fabricated chip is 86%.
Keywords :
DC-DC power convertors; pulse frequency modulation; BiCMOS process technology; booster; current protection scheme; low voltage DC-DC asynchronous boost regulator; pulse frequency modulation mode; thermal protection scheme; DC-DC Booster; PFM mode booster; high efficiency booster; inductive booster; low current booster; on chip current limit protection; on chip thermal protection;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Computer Engineering (ICECE), 2010 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4244-6277-3
Type :
conf
DOI :
10.1109/ICELCE.2010.5700727
Filename :
5700727
Link To Document :
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