Si ICL based Si3N4 passivation on InAlAs surface of InP-HEMT by RPECVD system

Author

Sung-Soon, Choi ; Kwan-Hoon, Lee ; Byeong-Seok, Song

Author_Institution

Korea Electron. Technol. Inst., Seongnam, South Korea

fYear

2009

fDate

21-25 Sept. 2009

Firstpage

1

Lastpage

2

Abstract

As a promising device for high speed communication, HEMT has got many intention. But, it is long way to field-application of HEMT because of instability of the device. Especially, surface of InP-HEMT¹ (InAlAs) is very unstable and bandgap of InP is narrower than conventional GaAs-HEMT, so kink effect is very severe consequently. Si ICL(Inter Control Layer) based SiN passivation² for GaAs-HEMT has been suggested before, and I applied it to the InP-HEMT passivation process. It showed that Si ICL based passivation was more effective for reducing surface state.

Keywords

III-V semiconductors; energy gap; high electron mobility transistors; indium compounds; passivation; plasma CVD; surface states; InAlAs; InP; InP-HEMT; RPECVD system; Si ICL based Si₃N₄ passivation; high electron mobility transistor; intercontrol layer; kink effect; surface state; HEMTs; Indium compounds; Indium phosphide; Passivation; Photonic band gap; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on

Conference_Location

Busan

Print_ISBN

978-1-4244-5416-7

Electronic_ISBN

978-1-4244-5417-4

Type

conf

DOI

10.1109/ICIMW.2009.5325750

Filename

5325750