DocumentCode
2327928
Title
Influence of output impedance on power added efficiency of Si-bipolar power transistors
Author
van Rijs, F. ; Dekker, R. ; Visser, H.A. ; Huizing, H.G.A. ; Hartskeerl, D. ; Magnee, P.H.C. ; Dondero, R.
Author_Institution
Philips Dicrete Semicond., Nijmegen, Netherlands
Volume
3
fYear
2000
fDate
11-16 June 2000
Firstpage
1945
Abstract
The power added efficiency (PAE) of low voltage RF bipolar power transistors for cellular applications, is carefully analyzed experimentally and theoretically. We found that the transistor with low output capacitance operates in "inverse class AB", which facilitates high efficiencies. FE as high as 77% at 1.8 GHz with 3.5 V supply voltage have been obtained.
Keywords
Capacitance; Electric impedance; Elemental semiconductors; Power bipolar transistors; Semiconductor device measurement; Silicon; UHF bipolar transistors; 1.8 GHz; 3.5 V; 77 percent; LV RF bipolar power transistors; PAE; Si; Si bipolar power transistors; cellular applications; high efficiencies; inverse class AB; low output capacitance; low voltage power transistors; output impedance; power added efficiency; Bipolar transistors; Capacitance; GSM; Impedance; Power amplifiers; Power generation; Power measurement; Power transistors; Radio frequency; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest. 2000 IEEE MTT-S International
Conference_Location
Boston, MA, USA
ISSN
0149-645X
Print_ISBN
0-7803-5687-X
Type
conf
DOI
10.1109/MWSYM.2000.862364
Filename
862364
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