Title :
An ultra low-power delta-sigma modulator using charge-transfer amplifier technique
Author :
Kuo, Chien-Hung ; Lee, Kuan-Yi ; Wu, Ming-Feng
Author_Institution :
Dept. of Appl. Electron. Technol., Nat. Taiwan Normal Univ., Taipei
fDate :
Nov. 30 2008-Dec. 3 2008
Abstract :
In this paper, an ultra low-power delta-sigma (DeltaSigma) modulator applying charge-transfer amplifier (CTA) technique for voice-band applications is presented. Both the fully-differential charge-transfer amplifier and integrator are developed for higher dynamic range of the modulator. A 67 dB of the peak SNR within a 4 kHz of bandwidth is reached in the presented modulator under a 2.5 MHz of sampling rate. The prototype circuit has been implemented in a 0.18 mum 1P6M CMOS technology. The chip area excluding PADs is 0.50 times 0.28 mm2. Due to its zero static current of CTA, only dynamic power is consumed in the circuit. The power consumption of the analog part of the presented second-order DeltaSigma modulator is only 3.4 muW. The total power consumption of the whole modulator is 36 muW at a 1.8 V of supply voltage.
Keywords :
CMOS integrated circuits; amplifiers; charge exchange; delta-sigma modulation; integrating circuits; low-power electronics; mixed analogue-digital integrated circuits; 1P6M CMOS technology; charge-transfer amplifier technique; chip area; dynamic power; fully-differential charge-transfer amplifier; fully-differential charge-transfer integrator; power consumption; second-order DeltaSigma modulator; ultra low-power delta-sigma modulator; voice-band application; zero static current; Bandwidth; CMOS technology; Capacitance; Capacitors; Circuit noise; Consumer electronics; Delta modulation; Energy consumption; Sampling methods; Voltage;
Conference_Titel :
Circuits and Systems, 2008. APCCAS 2008. IEEE Asia Pacific Conference on
Conference_Location :
Macao
Print_ISBN :
978-1-4244-2341-5
Electronic_ISBN :
978-1-4244-2342-2
DOI :
10.1109/APCCAS.2008.4746250
