THz sensors based on spin orbit split off levels

Author

Perera, A.G.U. ; Jayaweera, P.V.V. ; Matsik, S.G.

Author_Institution

Dept. of Phys. & Astron., Georgia State Univ., Atlanta, GA, USA

fYear

2009

fDate

21-25 Sept. 2009

Firstpage

1

Lastpage

2

Abstract

A high operating temperature THz sensor based on spin-split-off transitions in GaN/AlGaN heterojunction is proposed. The concept was theoretically modeled based on an experimentally proven short wavelength (3.6 mum) spin-split off GaAs/AlGaAs infrared (SWIR) detector which has spin-orbital-energy of 0.34 eV (3.6 mum). This paper describes an extension of the GaAs theoretical model for GaN based system, which has spin-orbital energy of 0.02 eV (5 THz).

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; infrared detectors; terahertz wave detectors; wide band gap semiconductors; GaAs-AlGaAs; GaN-AlGaN; THz sensor; electron volt energy 0.02 eV; electron volt energy 0.34 eV; gallium nitride based system; infrared detector; spin orbit split off level; spin orbital energy; spin-split-off transitions; wavelength 3.6 mum; Absorption; Gallium arsenide; Gallium nitride; III-V semiconductor materials; Infrared detectors; Light scattering; Optical materials; Particle scattering; Phonons; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared, Millimeter, and Terahertz Waves, 2009. IRMMW-THz 2009. 34th International Conference on

Conference_Location

Busan

Print_ISBN

978-1-4244-5416-7

Electronic_ISBN

978-1-4244-5417-4

Type

conf

DOI

10.1109/ICIMW.2009.5325760

Filename

5325760