Noise performance of Gate engineered double gate MOSFETs for analog and RF applications

Author

Mohankumar, N. ; Syamal, Binit ; Shamshudeen, J. ; Vijayan, K. ; Saravanakumar, R. ; Baskaran, S. ; Bharath, K. ; Ravi, S. ; Sarkar, C.K.

Author_Institution

Dept. of Electron. & Commun. Eng., S.K.P Eng. Coll., Tiruvannamalai, India

fYear

2010

fDate

18-20 Dec. 2010

Firstpage

586

Lastpage

589

Abstract

Due to their excellent scalability and better immunity to short channel effects, Double gate MOSFETs rule the CMOS applications era. However for channel lengths below 100nm, DG MOSFETs still show considerable threshold voltage roll off and to overcome this, gate engineering technique can be widely used. In this paper, we systematically investigate the analog/RF and Noise performance of Gate engineered DG MOSFETs for System-on-chip applications. A very good improvement in noise parameters such as power spectral density and Noise figure are observed in case of DMDG devices compared to its single metal counterpart.

Keywords

CMOS analogue integrated circuits; MOSFET; integrated circuit noise; radiofrequency integrated circuits; semiconductor device noise; system-on-chip; RF application; analog application; gate engineered double gate MOSFET; noise figure; noise performance; power spectral density; system-on-chip application; Dual-metal double gate (DM-DG); Noise figure; power spectral density and cut-off frequency; radio-frequency (RF) applications;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering (ICECE), 2010 International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4244-6277-3

Type

conf

DOI

10.1109/ICELCE.2010.5700760

Filename

5700760