• DocumentCode
    2328503
  • Title

    Optical properties of semiconducting carbon thin films electrodeposited on Silicon

  • Author

    Uddin, Muhammad Athar ; Choudhury, Shamimul Haque ; Mominuzzaman, Sharif M.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
  • fYear
    2010
  • fDate
    18-20 Dec. 2010
  • Firstpage
    590
  • Lastpage
    593
  • Abstract
    Carbon thin films were deposited on Silicon (Si) substrates by electrolysis of methanol. The effect of camphor (C10H16O) - a natural source, incorporation in methanol is investigated. Camphor with varying amount (2%, 4%, 6% and 8%) was mixed in methanol solvent to prepare the electrolytes. Silicon substrates were mounted on the negative electrode. Remarkable change in the variation of current density as a function of applied potential was observed with camphor content. The films were characterized by optical microscopy, scanning electron microscopy (SEM), and optical transmittance/reflectance measurement by UV-VIS-NIR techniques. From optical microscopy and SEM micrograph sharp differences between deposited films are observed. FTIR spectra show absorption peaks in between 1250cm-1 to 1750 cm-1 which is the characteristic of diamond like carbon (DLC)/ amorphous carbon (a-C) films. From the transmittance/reflectance measurement of Si substrate samples for different percentage of camphor in methanol (0% and 6%) using UV-VIS-NIR technique it is found that the optical properties like optical transmittance, reflectance and absorption are different for different samples (due to change in camphor incorporation with methanol). And it is found that the optical band gap for Si substrate using only methanol solution is 1.1 eV then by adding 6% camphor into the solution it increases to 1.2 eV.
  • Keywords
    Fourier transform spectra; carbon; current density; electrodeposition; electrodeposits; elemental semiconductors; energy gap; infrared spectra; optical microscopy; scanning electron microscopy; semiconductor growth; semiconductor thin films; ultraviolet spectra; visible spectra; C; C10H16O; DLC; FTIR spectra; SEM micrograph; Si; UV-VIS-NIR spectra; amorphous carbon films; camphor; current density variation; diamond like carbon; electrodeposited semiconducting carbon thin films; electrolytes; methanol electrolysis; negative electrode; optical band gap; optical microscopy; optical properties; optical reflectance measurement; optical transmittance measurement; scanning electron microscopy; Camphor; Carbon; Electrodepositing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Computer Engineering (ICECE), 2010 International Conference on
  • Conference_Location
    Dhaka
  • Print_ISBN
    978-1-4244-6277-3
  • Type

    conf

  • DOI
    10.1109/ICELCE.2010.5700761
  • Filename
    5700761