DocumentCode :
2328582
Title :
Electrostatically driven micro resonator with a CMOS capacitive read out
Author :
Satuby, Yinon ; Ben-Yehuda, Uri ; Jakobson, Claudio G. ; Shneider, Jacob ; Lavie, Dan ; Nemirovsky, Yael ; Kaldor, Shmuel ; Hershkovitz, Meriam ; Netzer, Ehud
Author_Institution :
Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
fYear :
1995
fDate :
7-8 March 1995
Abstract :
An electrostatically driven micro resonator is fabricated from single-crystal silicon, using micromachining techniques. The displacement amplitude is measured through differential capacitance measurement, implemented on a CMOS interface circuit, which also provides the excitation clocks for the resonator. The unique feature of this micromechanical system is the integration method applied for attaching the resonator to the CMOS chip. The integration is based upon indium bumps technology, which is now established in modules of infra-red focal plane arrays. A technology which is extended here for the first time, to the best of our knowledge, to microelectromechanical systems.
Keywords :
CMOS integrated circuits; displacement measurement; elemental semiconductors; micromachining; micromechanical resonators; silicon; wafer bonding; CMOS capacitive read out; Si; bumps technology; differential capacitance measurement; displacement amplitude; electrostatically driven microresonator; excitation clocks; integration method; microelectromechanical systems; micromachining techniques; CMOS technology; Capacitance measurement; Clocks; Displacement measurement; Electrostatic measurements; Integrated circuit measurements; Micromachining; Micromechanical devices; Semiconductor device measurement; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Electronics Engineers in Israel, 1995., Eighteenth Convention of
Conference_Location :
Tel Aviv, Israel
Print_ISBN :
0-7803-2498-6
Type :
conf
DOI :
10.1109/EEIS.1995.513810
Filename :
513810
Link To Document :
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