• DocumentCode
    2328848
  • Title

    Function by defects at the atomic scale — new concepts for non-volatile memories

  • Author

    Waser, Rainer ; Wuttig, Matthias

  • Author_Institution
    IWE 2, RWTH Aachen Univ., Aachen, Germany
  • fYear
    2009
  • fDate
    14-18 Sept. 2009
  • Firstpage
    65
  • Lastpage
    72
  • Abstract
    A survey of non-volatile, highly scalable memory devices which utilize dedicated resistive switching phenomena in nanoscale chalcogenide-based memory cells is presented. The classification of the memory effects, the understanding of the underlying mechanisms, and the crucial role of structural defects are outlined.
  • Keywords
    chalcogenide glasses; nanotechnology; noncrystalline defects; phase change materials; random-access storage; switching; function-by-defects; memory effects; nanoscale chalcogenide memory cell; nonvolatile memories; resistive switching; structural defects; Chemical technology; Electric resistance; Information technology; Metal-insulator structures; Nanoscale devices; Nonvolatile memory; Random access memory; Read-write memory; Reflectivity; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ESSCIRC, 2009. ESSCIRC '09. Proceedings of
  • Conference_Location
    Athens
  • ISSN
    1930-8833
  • Print_ISBN
    978-1-4244-4354-3
  • Type

    conf

  • DOI
    10.1109/ESSCIRC.2009.5325927
  • Filename
    5325927
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2328848