DocumentCode
2329119
Title
Oxide Soft Breakdown : From device modeling to small circuit simulation
Author
Gerrer, L. ; Ghibaudo, G. ; Ribes, G.
Author_Institution
IMEP-LAHC, Minatec-INPG, Grenoble, France
fYear
2009
fDate
14-18 Sept. 2009
Firstpage
368
Lastpage
371
Abstract
After several experiments of the impact of soft-breakdown on MOS device´s operation and parameters, we use the current partitioning equations to express the channel debiasing and compare its influence to the leakage current. A 3D TCAD model is set up and directly used in small circuit´s mixed mode simulations to evaluate the SBD impact on inverters and SRAM processes. Finally an analytical model of the degradation effects is proposed, to be integrated to compact models.
Keywords
CMOS integrated circuits; SRAM chips; integrated circuit modelling; leakage currents; semiconductor device breakdown; semiconductor device models; technology CAD (electronics); 3D TCAD model; MOS device operation; SBD impact; SRAM process; circuit simulation; current partitioning equations; device modeling; inverter; leakage current; oxide soft breakdown; Analytical models; Breakdown voltage; Circuit simulation; Electric breakdown; Gate leakage; Inverters; Leakage current; Random access memory; Stress; Thickness measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
ESSCIRC, 2009. ESSCIRC '09. Proceedings of
Conference_Location
Athens
ISSN
1930-8833
Print_ISBN
978-1-4244-4354-3
Type
conf
DOI
10.1109/ESSCIRC.2009.5325941
Filename
5325941
Link To Document