Title :
122 GHz low-noise-amplifier in sige technology
Author :
Winkler, W. ; Debski, W. ; Heinemann, B. ; Korndorfer, F. ; Rucker, H. ; Schmalz, K. ; Scheytt, Ch ; Tillack, B.
Author_Institution :
Silicon Radar GmbH, Frankfurt (Oder), Germany
Abstract :
The paper presents two types of 122 GHz low-noise-amplifiers (LNA) fabricated in SiGe BiCMOS technology. The amplifier design takes advantage of a novel transmission line structure with thick metal ground-shield on top of the MMIC. The circuit is a two-stage cascode topology utilizing transmission lines for input, output and inter-stage matching. The amplifiers are designed for high gain, minimum noise figure and low power consumption. Measurements show a gain of 13.5 dB and a noise figure of 9.6 dB at 122 GHz. The power consumption is 52 mW from a 3.5 Volt supply. The other version of the LNA with transformer coupling to the output instead of capacitive coupling has slightly lower gain. The amplifier is intended for the use in ISM-band radar and communication systems, wide-band communication systems and in radar imaging systems.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; field effect MIMIC; low noise amplifiers; low-power electronics; millimetre wave amplifiers; transmission lines; BiCMOS technology; ISM-band communication system; ISM-band radar; LNA fabrication; MMIC; SiGe; capacitive coupling; frequency 122 GHz; gain 13.5 dB; low-noise-amplifier; noise figure 9.6 dB; power 52 mW; radar imaging system; transformer coupling; transmission line structure; two-stage cascode topology; voltage 3.5 V; wide-band communication; BiCMOS integrated circuits; Distributed parameter circuits; Energy consumption; Germanium silicon alloys; MMICs; Noise figure; Paper technology; Power transmission lines; Radar imaging; Silicon germanium;
Conference_Titel :
ESSCIRC, 2009. ESSCIRC '09. Proceedings of
Conference_Location :
Athens
Print_ISBN :
978-1-4244-4354-3
DOI :
10.1109/ESSCIRC.2009.5325945
