• DocumentCode
    2329204
  • Title

    Influence of oxygen flow rate during annealing process of Titanium Dioxide thin films

  • Author

    Musa, M.Z. ; Ismail, A.A. ; Mamat, M.H. ; Noor, U.M. ; Rusop, M.

  • Author_Institution
    NANO-Electron. Center (NET), Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia
  • fYear
    2010
  • fDate
    18-20 Dec. 2010
  • Firstpage
    754
  • Lastpage
    756
  • Abstract
    Titanium Dioxide (TiO2) thin films have been successfully deposited on glass substrate using sol-gel method. The samples were then annealed in a furnace under different oxygen gas flow rate. Current-Voltage (I-V) measurement, SEM, and UV-Vis characterization are done for all samples. SEM images confirm the nanostructured nature of the thin films. The sample with higher oxygen flow rate shows significant improvement in term of structural and electrical properties.
  • Keywords
    annealing; scanning electron microscopy; semiconductor thin films; sol-gel processing; titanium compounds; ultraviolet spectra; visible spectra; SEM; TiO2; UV-Vis characterization; annealing; current-voltage measurement; electrical properties; glass substrate; nanostructured nature; oxygen flow rate; scanning electron microscopy; sol-gel method; structural properties; titanium dioxide thin films; Anneal; Dip Coating; Oxygen Flow Rate; Sol-gel; Titanium Dioxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Computer Engineering (ICECE), 2010 International Conference on
  • Conference_Location
    Dhaka
  • Print_ISBN
    978-1-4244-6277-3
  • Type

    conf

  • DOI
    10.1109/ICELCE.2010.5700802
  • Filename
    5700802
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2329204