BSIM4-based lateral diode model for RF ESD applications

Author

Yang, Ming-Ta ; Du, Yang ; Teng, Charles ; Chang, Tony ; Worley, Eugene ; Liao, Ken ; Yau, You-Wen ; Yeap, Geoffrey

Author_Institution

Qualcomm, San Diego, CA, USA

fYear

2010

fDate

12-13 April 2010

Firstpage

1

Lastpage

5

Abstract

Poly gate defined lateral ESD diodes were fabricated, characterized and modeled using Foundry standard 65nm CMOS technology. Compare to conventional STI diode, the lateral diode demonstrated superior Q-factor and TLP IT2 due to the reduced transport distance and RC constant. Aided by BSIM4 MOS transistor model, a physically based scalable lateral diode model was developed and presented here for the first time. The accuracy of the diode model was validated with RF characterization data over a broad device geometrical range. The model was successfully used in LNA and ESD CDM protection co-design. A good match of LNA RF performance between Si-data and model prediction was achieved for N+/PW and P+/NW lateral diodes. Experimental results showed that LNA with lateral diode protection passed +/-500V ESD CDM zap voltage, while LNA with STI diode started to fail at only -250V.

Keywords

CMOS integrated circuits; electrostatic discharge; foundries; low noise amplifiers; semiconductor diodes; BSIM4 MOS transistor model; BSIM4-based lateral diode model; CMOS technology; ESD CDM protection co-design; LNA; Q-factor; RC constant; RF ESD applications; TLP IT2; foundry standard; poly gate defined lateral ESD diodes; size 65 nm; voltage -250 V; voltage 500 V; CMOS technology; Diodes; Electrostatic discharge; Foundries; MOSFETs; Protection; Q factor; Radio frequency; Semiconductor device modeling; Solid modeling; BSIM4; CDM; ESD; LNA; lateral diode;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless and Microwave Technology Conference (WAMICON), 2010 IEEE 11th Annual

Conference_Location

Melbourne, FL

Print_ISBN

978-1-4244-6688-7

Type

conf

DOI

10.1109/WAMICON.2010.5461863

Filename

5461863