DocumentCode
2329351
Title
Influence Of Particles/Impurity Metals In RCA Cleaning Solutions On Surface Contamination.
Author
Watanabe, M. ; Kanno, I. ; Ohmori, T.
Author_Institution
Kasei Corporation
fYear
1994
fDate
21-22 June 1994
Firstpage
99
Lastpage
102
Abstract
We investigated how the particles and the metals in RCA cleaning solutions contaminate wafer surfaces in 64M DRAM development process. The most dominant factor to keep the cleanliness of wafer in present process is the overall cleanliness of the system, rather than the purity of chemicals itself. The residual contamination on wafers can be kept below detection limits by optimizing the cleaning process and its operation parameters. Therefore the requirements of quality levels for the fed chemicals are supposed not so high for the present 64M DRAM development process.
Keywords
Chemical processes; Cleaning; Filtration; Impurities; Laboratories; Particle measurements; Pollution measurement; Random access memory; Silicon; Surface contamination;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 1994. Extended Abstracts of ISSM '94. 1994 International Symposium on
Conference_Location
Tokyo, Japan
Type
conf
DOI
10.1109/ISSM.1994.729431
Filename
729431
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