DocumentCode
2329390
Title
New Delineation Of Process-Induced Micro-Defects Using Anodic Oxidation
Author
Fujii, S. ; Fuse, G. ; Inoue, M.
Author_Institution
Matsushita Electronics Corp.
fYear
1994
fDate
21-22 June 1994
Firstpage
111
Lastpage
114
Abstract
A new observation technique for process-induced micro-defects in ULSI using a combination of anodic oxidation and chemical removal of the oxide has been developed. Enhanced oxidation has occurred at the defect region due to the stress field and then craterlike delineation has been formed after oxide removal. AFM and SEM observation of the micro defects induced by ion implantation and applications using this technique to the failure analysis of MOS device fabrication are presented.
Keywords
Annealing; Chemical analysis; Chemical processes; Fabrication; Oxidation; Rough surfaces; Scanning electron microscopy; Silicon; Surface roughness; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Manufacturing, 1994. Extended Abstracts of ISSM '94. 1994 International Symposium on
Conference_Location
Tokyo, Japan
Type
conf
DOI
10.1109/ISSM.1994.729434
Filename
729434
Link To Document