The uniform turn-on of the emitter turn-off thyristor

Author

Xu, Zhenxue ; Bai, Yuming ; Zhang, Bin ; Huang, Alex Q.

Author_Institution

Bradley Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA

Volume

1

fYear

2002

fDate

2002

Firstpage

167

Abstract

The emitter turn-off (ETO) thyristor is a new MOS-controlled thyristor that is suitable for use in high-power converters due to its improved switching performance and easy control. This paper analyzes the uniform turn-on process of the ETO for the first time. To achieve uniform turn-on, the required gate current amplitude and rise rate are characterized for different ETO prototypes. Experimental results show that the ETOs can be uniformly turned on. Correspondingly, the maximum anode current rise rate is improved and the minimum on-time is reduced

Keywords

MOS-controlled thyristors; driver circuits; thyristor convertors; 1 kA; 4.5 kV; MOS controlled thyristor; control; emitter turn-off thyristor; gate current amplitude; gate drive circuit; high-power converters; maximum anode current rise rate; minimum on-time reduction; switching performance; uniform turn-on; Anodes; Cathodes; Delay effects; Latches; Performance analysis; Power electronics; Power engineering computing; Switches; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 2002. APEC 2002. Seventeenth Annual IEEE

Conference_Location

Dallas, TX

Print_ISBN

0-7803-7404-5

Type

conf

DOI

10.1109/APEC.2002.989243

Filename

989243