DocumentCode :
2330279
Title :
A implementation of fully integrated frequency synthesizer For ISM band transceiver
Author :
Chung, Younwoong ; Burm, Jinwook
Author_Institution :
Dept. of Electron. Eng., Sogang Univ., Seoul
fYear :
2008
fDate :
Nov. 30 2008-Dec. 3 2008
Firstpage :
1708
Lastpage :
1711
Abstract :
A fully integrated frequency synthesizer for ISM band transceiver has to exhibit low phase noise characteristic and small chip size. For the designed frequency synthesizer, the center frequency is 1.2 GHz and linear tuning range of over 450 MHz. To improve the performance of the frequency synthesizer, the phase noise of voltage controlled oscillator is minimized by enhancing Q-factor of the inductor through an inductor design modeling. In addition, an improved charge pump is proposed to minimize non-ideal effect of its performance. The simulation showed the proposed charge pump improved the jitter to 1.5 ns compared with 2.37 ns of the conventional charge pump. The designed circuits have been implemented with 0.18 mum RF CMOS technology.
Keywords :
Q-factor; frequency synthesizers; inductors; phase noise; transceivers; ISM band transceiver; RF CMOS technology; charge pump; frequency synthesizer; inductor Q-factor; inductor design modeling; low phase noise characteristic; voltage controlled oscillator; CMOS technology; Charge pumps; Frequency synthesizers; Inductors; Phase noise; Q factor; Semiconductor device modeling; Transceivers; Tuning; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2008. APCCAS 2008. IEEE Asia Pacific Conference on
Conference_Location :
Macao
Print_ISBN :
978-1-4244-2341-5
Electronic_ISBN :
978-1-4244-2342-2
Type :
conf
DOI :
10.1109/APCCAS.2008.4746368
Filename :
4746368
Link To Document :
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