DocumentCode :
2330547
Title :
Ion Implanted GaAs Fet Devices And Circuits
Author :
Ch´en, D.R.
fYear :
1977
fDate :
7-9 Nov 1977
Firstpage :
134
Lastpage :
138
Keywords :
Circuits; Doping; Gallium arsenide; Ion implantation; Microwave FETs; Microwave devices; Noise figure; Noise measurement; Temperature; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits, Systems and Computers, 1977. Conference Record. 1977 11th Asilomar Conference on
ISSN :
1058-6393
Type :
conf
DOI :
10.1109/ACSSC.1977.729493
Filename :
729493
Link To Document :
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