Fabrication and characterization of a-Si micro and nano-gap structure for electrochemical sensor

This paper presents the fabrication and electrical characterization of a-Si micro and nano-gap structure. Conventional UV lithography technique and dry etching for a-Si layer with wet etching for Al surface processes are used to fabricate the micro and nanogap based on the standard CMOS technology and characterization of its conductivity. The electrical characterization are applied by using semiconductor parameter analyzer (SPA), spectrum analyzer, IV-CV station for electrical characteristic, conductivity, resistivity and capacitance test is performed to characterize and check the structure of the device, which resulted in a small microgap as revealed by further I-V curve result that showed a current in nano amps.