Title :
Recent progress of Germanium MOSFETs
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
This paper overviews the present status of Ge MOSFET technology, particularly focusing on n-FETs in terms of materials science of GeO2/Ge gate stacks and inversion layer mobility, and then discusses future prospects and fundamental challenges from the viewpoint of new types of Ge FETs.
Keywords :
MOSFET; Ge; GeO2-Ge; Germanium MOSFET technology; inversion layer mobility; n-FET; Ge; GeO desorption; GeOI; metal source/drain; mobility; oxidation;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-0837-3
DOI :
10.1109/IMFEDK.2012.6218562
