DocumentCode
2331615
Title
Principle Hessian Direction based parameter reduction with process variation
Author
Mitev, Alex ; Marefat, Michael ; Ma, Dongsheng ; Wang, Janet M.
Author_Institution
Arizona Univ., Speedway
fYear
2007
fDate
4-8 Nov. 2007
Firstpage
632
Lastpage
637
Abstract
As CMOS technology enters the nanometer regime, the increasing process variation is bringing manifest impact on circuit performance. In this paper, we propose a principle Hessian direction (PHD) based parameter reduction approach. This new approach relies on the impact of each parameter on circuit performance to decide whether keeping or reducing the parameter. Compared with the existing principle component analysis (PCA) method, this performance based property provides us a significantly smaller set of parameters after reduction. The experimental results also support our conclusions. In all cases, an average of 53% of reduction is observed with less than 3% error in the mean value and less than 8% error in the variation.
Keywords
CMOS integrated circuits; Hessian matrices; network synthesis; principal component analysis; CMOS technology; parameter reduction; principle Hessian direction; principle component analysis; process variation; CMOS process; CMOS technology; Circuit analysis; Circuit optimization; Delay; Integrated circuit interconnections; Manufacturing processes; Performance analysis; Principal component analysis; Transfer functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer-Aided Design, 2007. ICCAD 2007. IEEE/ACM International Conference on
Conference_Location
San Jose, CA
ISSN
1092-3152
Print_ISBN
978-1-4244-1381-2
Electronic_ISBN
1092-3152
Type
conf
DOI
10.1109/ICCAD.2007.4397336
Filename
4397336
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