• DocumentCode
    2331619
  • Title

    Preparation of LNBN thin films by RF sputtering and their dielectric properties

  • Author

    Li, H.F. ; Meng, Z.Y. ; Huang, G.X.

  • Author_Institution
    Xi´´an Jiaotong Univ., China
  • fYear
    1989
  • fDate
    29 Oct-2 Nov 1989
  • Firstpage
    369
  • Lastpage
    374
  • Abstract
    (LaNa)0.5Bi2Nb2O9 (LNBN) thin films have been prepared by RF sputtering with substrate temperatures up to 450°C. The structural orientation of the annealed films versus substrate temperature is shown to be complex. The substrate temperature had a profound influence on the dielectric properties of the LNBN thin films. The LNBN thin films display a relaxation phase transition
  • Keywords
    bismuth compounds; dielectric losses; ferroelectric materials; ferroelectric thin films; ferroelectric transitions; lanthanum compounds; permittivity; sodium compounds; sputter deposition; sputtered coatings; (LaNa)0.5Bi2Nb2O9; 20 to 565 C; RF sputtering; annealed films; dielectric constant; dielectric loss tangent; dielectric properties; film preparation; relaxation ferroelectric; relaxation phase transition; structural orientation; substrate temperature; Annealing; Bismuth; Conductive films; Dielectric constant; Dielectric losses; Dielectric substrates; Dielectric thin films; Radio frequency; Sputtering; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation and Dielectric Phenomena, 1989. Annual Report., Conference on
  • Conference_Location
    Leesburg, VA
  • Type

    conf

  • DOI
    10.1109/CEIDP.1989.69574
  • Filename
    69574
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2331619