Title :
Nanodot-type floating gate memory with high-density nanodot array formed utilizing listeria ferritin
Author :
Kamitake, Hiroki ; Ohara, Kosuke ; Uenuma, Mutsunori ; Zheng, Bin ; Ishikawa, Yasuaki ; Yamashita, Ichiro ; Uraoka, Yukiharu
Author_Institution :
Nara Inst. of Sci. & Technol., Nara, Japan
Abstract :
We formed a high-density two-dimensional nanodot array by utilizing Ti-binding Dps (TD) which is a Listeria ferritin with Ti-binding peptides. A high-density nanodot array over 1012 cm-2 was formed on a SiO2 at low temperature by specific adsorption of TD. The hysteresis of the MOS capacitor with nanodot array formed utilizing TD was larger than that of the MOS capacitor fabricated utilizing ferritin. This research contributes to realizing future memory devices.
Keywords :
MOS capacitors; field effect memory circuits; hysteresis; silicon compounds; titanium; Listeria ferritin; MOS capacitor; SiO2; Ti; binding peptides; high-density nanodot array; high-density two-dimensional nanodot array; hysteresis; memory devices; nanodot-type floating gate memory; Annealing; Arrays; Hysteresis; MOS capacitors; Nanobioscience; Nonvolatile memory; Proteins; bio-nano process; floating gate memory; listeria ferritin;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-0837-3
DOI :
10.1109/IMFEDK.2012.6218576
