Effect of chirality on the silicon-carbon nanotube thermal interface resistance

In the present paper, thermal interface resistance between carbon nanotubes and silicon using molecular dynamic (MD) simulations is determined. The MD simulations showed a temperature discontinuity of 53°K and 56°K at the interface between silicon and (11,11) SWNT and (19,0), respectively. This results in thermal interfaces resistances of 2.85x10^-9 m K/W and 3.34x10^-9 m K/W at the interface between silicon and (11, 11) SWNT and (19, 0), respectively. These thermal interface resistances are of the same order of magnitude and the silicon (19, 0) CNT interface shows a 17% higher thermal interface resistance than that of silicon(11, 11) CNT interface.