DocumentCode :
2331842
Title :
A robust finite-point based gate model considering process variations
Author :
Mitev, Alex ; Ganesan, Dinesh ; Shanmugasundaram, Dheepan ; Cao, Yu ; Wang, Janet M.
Author_Institution :
Arizona Univ., Tucson
fYear :
2007
fDate :
4-8 Nov. 2007
Firstpage :
692
Lastpage :
697
Abstract :
This paper proposes a robust gate model based on a finite-point modeling scheme. With current source model (CSM) framework, a robust, finite-point gate model is constructed. The new model depends on the selective points of I-V curves of gates. Thus, it implicitly incorporates the variation related parameters into finite points. In addition, to provide good accuracy on output waveform, the new model creates the input and output capacitance elements as nonlinear dependency on input/output waveform and process variation parameters. Experimental results show that the generated gate model has less than 3.7% error at mean, less than 6.2% error at variance and less than 5.8% at 90% percentile for cumulative density functions (CDFs).
Keywords :
CMOS integrated circuits; integrated circuit design; CMOS technology; cumulative density functions; current source model; nonlinear dependency; process variations; robust finite-point based gate model; CMOS technology; Capacitance; Capacitance-voltage characteristics; Circuits; DH-HEMTs; Density functional theory; Equations; Intrusion detection; Robustness; Statistical analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer-Aided Design, 2007. ICCAD 2007. IEEE/ACM International Conference on
Conference_Location :
San Jose, CA
ISSN :
1092-3152
Print_ISBN :
978-1-4244-1381-2
Electronic_ISBN :
1092-3152
Type :
conf
DOI :
10.1109/ICCAD.2007.4397346
Filename :
4397346
Link To Document :
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