Fundamental study on junction termination structures for ultrahigh-voltage SiC PiN diodes

Author

Niwa, Hiroki ; Suda, Jun ; Kimoto, Tsunenobu

Author_Institution

Dept. of Electron. Sci. & Eng., Kyoto Univ., Kyoto, Japan

fYear

2012

fDate

9-11 May 2012

Firstpage

1

Lastpage

2

Abstract

15 kV-class 4H-SiC PiN diodes with various junction termination extension (JTE) structures have been experimentally investigated. JTE-dose dependence of the breakdown voltage for conventional single and two-zone JTE showed a narrow window of optimum JTE-dose to obtain high breakdown voltage. To widen this window, space-modulated JTE (SM-JTE) was introduced. 4H-SiC PiN diodes with SM-JTE showed a highest breakdown voltage of 15 kV, and a widening of the optimum JTE-dose window to obtain ultrahigh-voltage was realized at the same time.

Keywords

electric breakdown; p-i-n diodes; silicon compounds; wide band gap semiconductors; 4H-SiC PiN diodes; JTE structures; JTE-dose dependence; SiC; breakdown voltage; junction termination structures; optimum JTE-dose window; space-modulated JTE; two-zone JTE; ultrahigh-voltage PiN diodes; voltage 15 kV; Breakdown voltage; Electric breakdown; Fabrication; Junctions; PIN photodiodes; Silicon carbide; Substrates; PiN diode; junction termination extension (JTE); silicon carbide (SiC);

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-4673-0837-3

Type

conf

DOI

10.1109/IMFEDK.2012.6218579

Filename

6218579