Fabrication of nano-patterns using quick gel-nanoimprint process

Author

Araki, Shinji ; Zhang, Min ; Doe, Takahiro ; Lu, Li ; Horita, Masahiro ; Nishida, Takashi ; Ishikawa, Yasuaki ; Uraoka, Yukiharu

Author_Institution

Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol. (NAIST), Nara, Japan

fYear

2012

fDate

9-11 May 2012

Firstpage

1

Lastpage

2

Abstract

We investigated a quick patterning using gel-nanoimprint process for zinc oxide (ZnO) thin films. The X-ray diffraction measurement revealed that the ZnO films had wurtzite structure by annealing in the ambient air or oxygen. The ZnO film annealed in oxygen exhibited higher refractive index of 1.92 (at 720 nm for wavelength of light) which is close to that of a conventional ZnO film, whereas that of ZnO film annealed in air atmosphere provided very low value of 1.64. The width of ZnO patterns was in good agreement with that of a polydimethylsiloxane mold.

Keywords

II-VI semiconductors; X-ray diffraction; annealing; gels; nanofabrication; nanolithography; nanopatterning; soft lithography; thin films; wide band gap semiconductors; zinc compounds; X- ray diffraction measurement; ZnO; annealing; nanopattern fabrication; polydimethylsiloxane mold; quick gel-nanoimprint lithography processing; quick patterning; refractive index; thin film; wavelength 720 nm; wurtzite structure; Annealing; Fabrication; Films; Glass; Lithography; Refractive index; Zinc oxide; nanoimprint lithography; polydimethylsiloxane; sol-gel method; zinc oxide thin film;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-4673-0837-3

Type

conf

DOI

10.1109/IMFEDK.2012.6218583

Filename

6218583