A new version of monolithic ESBT® power actuator with increased current capability

A simple trick in the device design has permitted to sensibly increase the current capability of ESBT devices. This improvement was obtained without altering neither the design rules, nor the diffusion process, but with a different shape of the base contact. This paper explains some points of the device physics with the help of 3D electrical simulations. As a matter of fact the simulations showed the presence of a lateral parasitic diode that can be inhibited by a proper layout design. The electrical measurements of the new packaged devices have fully confirmed the predictions of the simulations.