Title :
Problems associated with parallel performance of high current semiconductor switches and their remedy
Author :
Abdi, B. ; Ranjbar, A.H. ; Malekian, K. ; Milimonfared, J. ; Gharehpetian, G.B.
Author_Institution :
Islamic Azad Univ., Damavand
Abstract :
The development in the technology of power semiconductors results in their application in FACTS devices, static switches, hybrid switches, HVDC, and high power converters. Since the nominal current of such devices does not satisfy high power applications, in order to increase the current ratings, switches should be paralleled. In this paper, the behavior of the paralleling of devices such as diodes, IGBTs, MOSFETs, and BJTs are discussed. A method is presented to improve parallel performance of high current semiconductors as well. The validity of proposed method is investigated in both simulation and implementation.
Keywords :
MOSFET; bipolar transistors; insulated gate bipolar transistors; power semiconductor switches; BJT; IGBT; MOSFET; parallel performance; semiconductor switches; Capacitors; Inductance; Insulated gate bipolar transistors; MOSFETs; Power electronics; Power semiconductor switches; Power systems; Semiconductor diodes; Temperature; Voltage; Current Balance; MOSFET; paralleling;
Conference_Titel :
Power Electronics, Electrical Drives, Automation and Motion, 2008. SPEEDAM 2008. International Symposium on
Conference_Location :
Ischia
Print_ISBN :
978-1-4244-1663-9
Electronic_ISBN :
978-1-4244-1664-6
DOI :
10.1109/SPEEDHAM.2008.4581135
