Toward the “ideal diode” using power MOSFET in full wave synchronous rectifiers for low voltage power supplies

Author

Mihaiu, M.I.

Author_Institution

Univ. of Craiova, Craiova

fYear

2008

fDate

11-13 June 2008

Firstpage

1384

Lastpage

1387

Abstract

Synchronous rectifiers can improve power efficiency, particularly in low-voltage, medium power applications. By using power MOSFET with low Ron resistance in parallel with classical diode, the diode function is closely to ldquoideal dioderdquo. The paper presents the simulation results of a full wave rectifier circuits with control circuit made by the known IC (charge pumps, CMOS analogue switches and MOSFETpsilas). The known IC can be used to design a new IC for full wave synchronous rectifier. The main applications of synchronous rectifiers are for DC-DC converter but we propose the extension to the general purpose rectifier circuit. For low voltage output rectifiers (smaller than 5 V) the efficiency can increase with 15% by using synchronous technique. In the paper is presented a new IC structure for control the full wave synchronous rectifier.

Keywords

DC-DC power convertors; power MOSFET; power integrated circuits; power semiconductor diodes; power supply circuits; rectifying circuits; DC-DC converter; IC structure; full wave rectifier circuit; full wave synchronous rectifier control; ideal diode; low Ron resistance; low voltage power supply; power MOSFET; Analog integrated circuits; CMOS analog integrated circuits; CMOS integrated circuits; Circuit simulation; Diodes; Low voltage; MOSFET circuits; Power MOSFET; Power supplies; Rectifiers; Integrated Circuit simulation; Synchronous Rectifiers; Synchronous detection;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics, Electrical Drives, Automation and Motion, 2008. SPEEDAM 2008. International Symposium on

Conference_Location

Ischia

Print_ISBN

978-1-4244-1663-9

Electronic_ISBN

978-1-4244-1664-6

Type

conf

DOI

10.1109/SPEEDHAM.2008.4581138

Filename

4581138