Light load operation of 6.5 kV 200 A IGBTs in half-bridge configuration

Author

Jalakas, T. ; Vinnikov, D. ; Laugis, J.

Author_Institution

Tallinn Univ. of Technol., Tallinn

fYear

2008

fDate

11-13 June 2008

Firstpage

1373

Lastpage

1378

Abstract

In this paper the light load operation of 6.5 kV 200 A IGBT modules in half-bridge configuration is analyzed. The study consists of an experimental and an analytical part. The experiments were carried out on a 40 kW high-voltage half-bridge isolated DC/DC converter. Studies focused on Infineon FZ200R65KF1 IGBT modules. In the analytical part, the static and dynamic losses of IGBT modules at different switching frequencies were calculated and compared with values acquired experimentally.

Keywords

DC-DC power convertors; insulated gate bipolar transistors; Infineon FZ200R65KF1 IGBT modules; current 200 A; high-voltage half-bridge isolated DC/DC converter; insulated gate bipolar transistors; voltage 6.5 kV; DC-DC power converters; Insulated gate bipolar transistors; Inverters; Power electronics; Pulse width modulation converters; Switching frequency; Testing; Thermal resistance; Topology; Voltage; DC-DC power conversion; Insulated gate bipolar transistors; pulse width modulated power converters; rail transportation power systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics, Electrical Drives, Automation and Motion, 2008. SPEEDAM 2008. International Symposium on

Conference_Location

Ischia

Print_ISBN

978-1-4244-1663-9

Electronic_ISBN

978-1-4244-1664-6

Type

conf

DOI

10.1109/SPEEDHAM.2008.4581139

Filename

4581139