• DocumentCode
    2332255
  • Title

    Power conversion efficiency characteristics of AlGaAs/GaAs based Schottky diode for on-chip rectenna devices in nanosystem

  • Author

    Mustafa, Farahiyah ; Parimon, Norfarariyanti ; Hashim, Abdul Manaf ; Abd Rahman, Shaharin Fadzli ; Osman, Mohd Nizam

  • Author_Institution
    Mater. Innovations & Nanoelectron. Res. Group, Univ. Teknol. Malaysia, Skudai, Malaysia
  • fYear
    2010
  • fDate
    1-3 Dec. 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper power conversion efficiency characteristics of AlGaAs/GaAs based Schottky diode for on-chip rectenna devices in nanosystem is studied. Schottky contact area, A is 20 μm × 20 μm, the lengths of CPW, LCPW is 100 μm and the distance between Schottky-ohmic contacts, diode is 40 μm. The processing steps used in the fabrication of Schottky diode are the conventional steps used in standard GaAs processing.
  • Keywords
    III-V semiconductors; Schottky diodes; aluminium compounds; gallium arsenide; nanofabrication; AlGaAs-GaAs; Schottky diode; Schottky-ohmic contacts; nanosystem; on-chip rectenna device; power conversion efficiency characteristics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4244-8853-7
  • Type

    conf

  • DOI
    10.1109/ESCINANO.2010.5700975
  • Filename
    5700975
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2332255