DocumentCode :
2332302
Title :
Observation of direct tunneling conduction for TDTFT in high temperatures
Author :
Kobayashi, T. ; Matsuo, N. ; Heya, A. ; Omura, Y. ; Yokoyama, S.
Author_Institution :
Dept. of Mater. Sci. & Chem., Univ. of Hyogo, Himeji, Japan
fYear :
2012
fDate :
9-11 May 2012
Firstpage :
1
Lastpage :
2
Abstract :
We calculated the tunneling current in the high temperatures and discussed the dominant conduction mechanism of TDTFT. Although the discrepancy between the measured and the calculated data is approximately one order, the increase ratio of Id to absolute temperature is nearly equal for the measured and the calculated one. These data strongly indicate that the dominant mechanism of the Id in the high temperatures for the TDTFT is direct tunneling (DT) from the tail area in the Fermi-Dirac distribution function of Al.
Keywords :
thin film transistors; tunnel transistors; Fermi-Dirac distribution function; TDTFT; direct tunneling conduction; dominant conduction mechanism; high temperatures; tunneling current; Current measurement; Electrodes; Logic gates; Silicon; Temperature distribution; Temperature measurement; Tunneling; Direct tunneling; High temperature; SiNX; TDTFT;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-0837-3
Type :
conf
DOI :
10.1109/IMFEDK.2012.6218599
Filename :
6218599
Link To Document :
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