• DocumentCode
    2332333
  • Title

    Crystallization mechanism of thick a-Si0.5Ge0.5 film by excimer laser annealing

  • Author

    Kino, Shota ; Nonomura, Yuki ; Heya, Akira ; Matsuo, Naoto ; Kanda, Kazuhiro ; Miyamoto, Shuji ; Amano, Sho ; Mochizuki, Takayasu ; Toko, Kaoru ; Sadoh, Taizoh ; Miyao, Masanobu

  • Author_Institution
    Dept. of Mater. Sci. & Chem., Univ. of Hyogo, Himeji, Japan
  • fYear
    2012
  • fDate
    9-11 May 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We investigated crystallization mechanism of a-Si0.5Ge0.5 film by excimer-laser annealing (ELA) at energy density of 50-70mJ/cm2 in comparison with a method of synchrotron radiation soft X-ray irradiation at storage ring current of 50-220 mA. The nucleation mechanism of Si0.5Ge0.5 via ELA will be discussed by considering the soft X-ray method.
  • Keywords
    Ge-Si alloys; crystallisation; excimer lasers; laser beam annealing; nucleation; semiconductor materials; semiconductor thin films; ELA; Si0.5Ge0.5; crystallization mechanism; current 50 mA to 220 mA; energy density; excimer laser annealing; nucleation mechanism; storage ring current; synchrotron radiation soft X-ray irradiation method; Annealing; Crystallization; Films; Photonics; Radiation effects; Silicon; Silicon germanium; ELA; SiGe thick film; crystallization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
  • Conference_Location
    Osaka
  • Print_ISBN
    978-1-4673-0837-3
  • Type

    conf

  • DOI
    10.1109/IMFEDK.2012.6218600
  • Filename
    6218600
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2332333