Title :
Crystallization mechanism of thick a-Si0.5Ge0.5 film by excimer laser annealing
Author :
Kino, Shota ; Nonomura, Yuki ; Heya, Akira ; Matsuo, Naoto ; Kanda, Kazuhiro ; Miyamoto, Shuji ; Amano, Sho ; Mochizuki, Takayasu ; Toko, Kaoru ; Sadoh, Taizoh ; Miyao, Masanobu
Author_Institution :
Dept. of Mater. Sci. & Chem., Univ. of Hyogo, Himeji, Japan
Abstract :
We investigated crystallization mechanism of a-Si0.5Ge0.5 film by excimer-laser annealing (ELA) at energy density of 50-70mJ/cm2 in comparison with a method of synchrotron radiation soft X-ray irradiation at storage ring current of 50-220 mA. The nucleation mechanism of Si0.5Ge0.5 via ELA will be discussed by considering the soft X-ray method.
Keywords :
Ge-Si alloys; crystallisation; excimer lasers; laser beam annealing; nucleation; semiconductor materials; semiconductor thin films; ELA; Si0.5Ge0.5; crystallization mechanism; current 50 mA to 220 mA; energy density; excimer laser annealing; nucleation mechanism; storage ring current; synchrotron radiation soft X-ray irradiation method; Annealing; Crystallization; Films; Photonics; Radiation effects; Silicon; Silicon germanium; ELA; SiGe thick film; crystallization;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-0837-3
DOI :
10.1109/IMFEDK.2012.6218600
