Title :
Breakdown characteristics in AlGaN/GaN HEMTs with multi-field-plate structure
Author :
Asano, T. ; Yamada, N. ; Saito, T. ; Tokuda, H. ; Kuzuhara, M.
Author_Institution :
Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan
Abstract :
We have fabricated AlGaN/GaN high electron mobility transistors (HEMTs) with a multi-field-plate structure. An enhanced breakdown voltage was achieved by introducing a multi-field-plate to a conventional HEMT structure. This is the first report demonstrating enhanced breakdown characteristics by applying a bias voltage to the field-plate.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; bias voltage; breakdown characteristics enhancement; breakdown voltage enhancement; conventional HEMT structure; high electron mobility transistors; multi-field-plate structure; Aluminum gallium nitride; Breakdown voltage; Electric breakdown; Gallium nitride; HEMTs; Logic gates; MODFETs; Breakdown voltage; GaN; HEMT; field plate;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-0837-3
DOI :
10.1109/IMFEDK.2012.6218601
