Title :
Analysis of electron transport in AlGaN based on empirical pseudopotential method
Author :
Kamiya, Y. ; Kodama, K. ; Kimizu, T. ; Tokuda, H. ; Kuzuhara, M.
Author_Institution :
Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan
Abstract :
This paper describes calculation of band structures in AlGaN based on an empirical pseudopotential method. The pseudopotential parameters were adjusted so that the Al composition dependent bandgap energy exhibited reasonable agreements with the experimental data. The full-band model of AlGaN was applied to the electron transport calculation in AlGaN/GaN structures. Current-voltage characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were calculated based on a full-band Monte Carlo algorithm.
Keywords :
Monte Carlo methods; high electron mobility transistors; AlGaN-GaN; HEMT; band structures; current-voltage characteristics; electron transport calculation; empirical pseudopotential method; full-band Monte Carlo algorithm; high electron mobility transistors; Aluminum gallium nitride; Current-voltage characteristics; Gallium nitride; HEMTs; MODFETs; Monte Carlo methods; Photonic band gap; AlGaN/GaN; HEMTs; electron transport; full band; pseudopotential;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-0837-3
DOI :
10.1109/IMFEDK.2012.6218603
