Analysis of electron transport in AlGaN based on empirical pseudopotential method

Author

Kamiya, Y. ; Kodama, K. ; Kimizu, T. ; Tokuda, H. ; Kuzuhara, M.

Author_Institution

Grad. Sch. of Eng., Univ. of Fukui, Fukui, Japan

fYear

2012

fDate

9-11 May 2012

Firstpage

1

Lastpage

2

Abstract

This paper describes calculation of band structures in AlGaN based on an empirical pseudopotential method. The pseudopotential parameters were adjusted so that the Al composition dependent bandgap energy exhibited reasonable agreements with the experimental data. The full-band model of AlGaN was applied to the electron transport calculation in AlGaN/GaN structures. Current-voltage characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) were calculated based on a full-band Monte Carlo algorithm.

Keywords

Monte Carlo methods; high electron mobility transistors; AlGaN-GaN; HEMT; band structures; current-voltage characteristics; electron transport calculation; empirical pseudopotential method; full-band Monte Carlo algorithm; high electron mobility transistors; Aluminum gallium nitride; Current-voltage characteristics; Gallium nitride; HEMTs; MODFETs; Monte Carlo methods; Photonic band gap; AlGaN/GaN; HEMTs; electron transport; full band; pseudopotential;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-4673-0837-3

Type

conf

DOI

10.1109/IMFEDK.2012.6218603

Filename

6218603