Title :
Atomic disorder effects on electronic states in InAs/GaAs intermediate-band solar cells
Author :
Takahashi, Hiroki ; Minari, Hideki ; Mori, Nobuya
Author_Institution :
Grad. Sch. of Eng., Osaka Univ., Suita, Japan
Abstract :
We have theoretically investigated the impact of atomic disorder on the electronic states in vertically stacked InAs/GaAs quantum dot superlattices by randomly replacing some In atoms with Ga atoms. We find that as long as the number of replaced In atoms is the same, the energy shift is fairly independent of the roughness pattern.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor quantum dots; semiconductor superlattices; solar cells; InAs-GaAs; atomic disorder effects; electronic states; intermediate band solar cells; quantum dot superlattices; roughness pattern; Educational institutions; Energy states; Gallium arsenide; Photonic band gap; Photovoltaic cells; Quantum dots; Superlattices; GaAs; InAs; Intermediate-band solar cell; Quantum dot; Solar cell; Superlattice;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-0837-3
DOI :
10.1109/IMFEDK.2012.6218607
