DocumentCode
2332484
Title
Atomic disorder effects on electronic states in InAs/GaAs intermediate-band solar cells
Author
Takahashi, Hiroki ; Minari, Hideki ; Mori, Nobuya
Author_Institution
Grad. Sch. of Eng., Osaka Univ., Suita, Japan
fYear
2012
fDate
9-11 May 2012
Firstpage
1
Lastpage
2
Abstract
We have theoretically investigated the impact of atomic disorder on the electronic states in vertically stacked InAs/GaAs quantum dot superlattices by randomly replacing some In atoms with Ga atoms. We find that as long as the number of replaced In atoms is the same, the energy shift is fairly independent of the roughness pattern.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; semiconductor quantum dots; semiconductor superlattices; solar cells; InAs-GaAs; atomic disorder effects; electronic states; intermediate band solar cells; quantum dot superlattices; roughness pattern; Educational institutions; Energy states; Gallium arsenide; Photonic band gap; Photovoltaic cells; Quantum dots; Superlattices; GaAs; InAs; Intermediate-band solar cell; Quantum dot; Solar cell; Superlattice;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location
Osaka
Print_ISBN
978-1-4673-0837-3
Type
conf
DOI
10.1109/IMFEDK.2012.6218607
Filename
6218607
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