DocumentCode :
2332498
Title :
Rectification effects in ZnO-based transparent self-switching nano-diodes
Author :
Kimura, Y. ; Kiso, T. ; Higaki, T. ; Sun, Y. ; Maemoto, T. ; Sasa, S. ; Inoue, M.
Author_Institution :
Nanomater. Microdevices Res. Center, Osaka Inst. of Technol., Osaka, Japan
fYear :
2012
fDate :
9-11 May 2012
Firstpage :
1
Lastpage :
2
Abstract :
We report on the fabrication and characterization of the self-switching nano-diodes using zinc oxide films grown on glass substrates for use as transparent rectifiers. Diode-like characteristics were clearly observed. The current clearly increased with increases in the channel length and the turn-on voltage sifted toward zero volt with decreasing the channel width. Overall, we found that the rectifying characteristics can be controlled by the device geometry. The rectifying characteristics were further investigated by reducing the electron concentration. Although the current value decreased as a result of the to reduction in the electron concentration, it was found that rectifying characteristics, in particular the turn-on voltage, can be controlled by the electron concentration.
Keywords :
II-VI semiconductors; nanoelectronics; rectification; rectifiers; semiconductor diodes; semiconductor growth; semiconductor thin films; wide band gap semiconductors; zero voltage switching; zinc compounds; ZnO; ZnO-based transparent self-switching nanodiodes; channel length; channel width; device geometry; diode characteristics; electron concentration; glass substrates; rectification effects; transparent rectifiers; turn-on voltage; zero volt; zinc oxide films; Fabrication; Films; Glass; Rectifiers; Substrates; Voltage control; Zinc oxide; Zinc Oxide (ZnO); rectifier; self-switching nano-diode (SSD);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-0837-3
Type :
conf
DOI :
10.1109/IMFEDK.2012.6218608
Filename :
6218608
Link To Document :
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