Effects of post annealing on IZO thin-film transistor characteristics

Author

Morita, R. ; Maemoto, T. ; Sasa, S.

Author_Institution

Nanomater. Microdevices Res. Center, Osaka Inst. of Technol., Osaka, Japan

fYear

2012

fDate

9-11 May 2012

Firstpage

1

Lastpage

2

Abstract

We studied how post-annealing process affects the transparent thin-film transistor (TFT) characteristics. Polycrystalline indium zinc oxide layer deposited by rf magnetron sputtering on an unheated glass substrate was used for the active channel layer. The post annealing was conducted for 30 minutes by varying ambient gases and temperature. At annealing temperature of 450°C, the threshold voltage was shifted from -12 V to 0 V. Also, transconductance (g_m) was improved by one order of magnitude. Structural dependence was also examined for top-gate structures with or without gate electrode overlap with sauce electrode.

Keywords

annealing; thin film transistors; active channel layer; annealing temperature; gate electrode overlap; polycrystalline indium zinc oxide layer; post annealing; rf magnetron sputtering; sauce electrode; structural dependence; temperature 450 C; thin film transistor characteristics; top-gate structures; transconductance; unheated glass substrate; Annealing; Electrodes; Logic gates; Sputtering; Thin film transistors; Threshold voltage; Transconductance; IZO; TFT; post annealing;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-4673-0837-3

Type

conf

DOI

10.1109/IMFEDK.2012.6218610

Filename

6218610