Title :
Oxidation and structure scheme studies for sensitivity improvement of Si1−xGex nanowire biosensor
Author :
Chu-Feng Chen ; Kow-Ming Chang ; Yu-Bin Wang ; Chung-Hsien Liu ; Chin-Ning Wu ; Cheng-Ting Hsieh ; Chiung-Hui Lai ; Kuo-Chin Chang
Author_Institution :
Dept. of Elec. Eng. & Inst. of Elec., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
Because of the large surface-to-volume ratio of nano-structure, the silicon nanowires (SiNWs) provide a high sensitivity for highly sensitive detection of biological and chemical species. Moreover, the SiGe-on-Insulator (SGOI) by Ge-condensation process can enhance the mobility of hole carrier and then improve the nanowires´s conductance. In this study, we discuss SiGe nanowire structural effect by changing Si/SiGe stacked ratio and oxidation effect in different annealing ambient. The optimized Si/SiGe stacked structure with suitable oxidation process has more twice enhancement of sensitivity compared to conventional SiNWs biosensor.
Keywords :
Ge-Si alloys; annealing; biosensors; condensation; hole mobility; nanosensors; nanowires; oxidation; silicon-on-insulator; (SGOI; Ge-condensation process; Si1-xGex; SiGe-on-Insulator; annealing ambient; biological species detection; chemical species detection; hole carrier mobility enhancement; nanostructure surface-to-volume; nanowire biosensor sensitivity improvement; nanowire structural effect; nanowires conductance; optimized stacked structure; oxidation scheme study; structure scheme study; Annealing; Nanobioscience; Oxidation; Sensitivity; Silicon; Silicon germanium; Surface treatment; Bisosensor; Ge-condendation; Nanowire; SiGe;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-0837-3
DOI :
10.1109/IMFEDK.2012.6218613
