Characteristic shift of a CTFT inverter using n-type IGZO and p-type F8T2 TFTs after temperature and operation stresses

Author

Inoue, Masashi ; Hasegawa, Takayuki ; Nakanishi, Takashi ; Kimura, Mutsumi ; Nomura, Kenji ; Kamiya, Toshio ; Hosono, Hideo

Author_Institution

Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan

fYear

2012

fDate

9-11 May 2012

Firstpage

1

Lastpage

2

Abstract

We developed three-dimensional stacked complementary TFT devices using n-type amorphous In-Ga-Zn-O and p-type poly-(9, 9-dioctylfluorene-co-bithiophene) TFTs. In this presentation, we will report the characteristic shift of the CTFT inverter after temperature and operation stresses. The characteristic shifts extremely negatively after temperature stress. This is caused by the characteristic degradation of the F8T2 TFT. On the other hand, the characteristic shifts gradually positively after operation stress. This is caused by the characteristic degradation of the a-IGZO TFT.

Keywords

gallium; indium; invertors; oxygen; thin film transistors; zinc; CTFT inverter; In-Ga-Zn-O; characteristic degradation; characteristic shifts; n-type IGZO; n-type amorphous TFT; operation stresses; p-type F8T2 TFT; p-type poly-9,9-dioctylfluorene-co-bithiophene TFT; temperature stresses; three-dimensional stacked complementary TFT devices; Degradation; Inverters; Logic gates; Polymers; Stress; Temperature; Thin film transistors; amorphous In-Ga-Zn-O (a-IGZO) TFT; characteristic shift; complementary TFT (CTFT); inverter; operation stress; poly-(9, 9-dioctylfluorene-co-bithiophene) (F8T2) TFT; temperature stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-4673-0837-3

Type

conf

DOI

10.1109/IMFEDK.2012.6218614

Filename

6218614