DocumentCode
2332605
Title
A polarization analyzing CMOS image sensor with metal wire grid in 65-nm standard CMOS technology
Author
Wakama, Norimitsu ; Matsuoka, Hitoshi ; Ando, Keisuke ; Noda, Toshihiko ; Sasagawa, Kiyotaka ; Tokuda, Takashi ; Ohta, Jun
Author_Institution
Grad. Sch. of Mater. Sci., Nara Inst. of Sci. & Technol. (NAIST), Nara, Japan
fYear
2012
fDate
9-11 May 2012
Firstpage
1
Lastpage
2
Abstract
In this paper, we demonstrate a CMOS image sensor with high extinction ratio on-chip polarizers with 65-nm standard CMOS technology. The polarizer is based on a metal wire grid fabricated with the metal wiring layers. The extinction ratio of 11.0 dB is achieved by a pixel with on-chip polarizer where the line / space widths are 90 nm / 90 nm.
Keywords
CMOS image sensors; polarisation; CMOS technology; metal wire grid; on-chip polarizers; polarization analyzing CMOS image sensor; size 65 nm; size 90 nm; CMOS image sensors; CMOS integrated circuits; Extinction ratio; Metals; System-on-a-chip; Wires; CMOS image sensor; On-chip Polarizer; Polarization;
fLanguage
English
Publisher
ieee
Conference_Titel
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location
Osaka
Print_ISBN
978-1-4673-0837-3
Type
conf
DOI
10.1109/IMFEDK.2012.6218616
Filename
6218616
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