DocumentCode :
2332653
Title :
Minority carrier lifetime of thermal degradation in organic light emitting diode
Author :
Park, Hyun-Ae ; Choi, Byoung-Seon ; Choi, Byoung-Deog
Author_Institution :
Sch. of Inf. & Commun. Eng., SungKyunKwan Univ., Suwon, South Korea
fYear :
2012
fDate :
9-11 May 2012
Firstpage :
1
Lastpage :
2
Abstract :
Lifetime is one of the most important parameter that it is implied many information of device electrical characteristics directly. It can be estimated to using the degradation of luminance with accelerating the charge supply in the traditional method of display devices lifetime analyzing. It takes great deal of time and a lot of effort to measure the lifetime according to degradation effects. This plot reveals that minority carrier lifetime is dominant in the entire device life of organic light emitting diode (OLED). Forward current (IF) measured before switching, reverse current (IR) after switching, storage time (ts) and reverse recovery time (trr) were measured by transient response to drive minority carrier lifetime (τp). The device minority carrier lifetime 90ns and 121ns extracted from transient equation and 9μs to 12μs average storage time is obtained in RGB OLEDs, respectively. We have reported that comparing the minority carrier lifetime characteristics of OLED with red, green and blue general diode, the color emission material induced device lowering through the carrier behavior. Ultimately, using the optical measurement including luminance transition and whole lifetime, carrier lifetime correlated with degradation is elicited in this paper.
Keywords :
carrier lifetime; minority carriers; organic light emitting diodes; thermal analysis; transient response; RGB OLED; blue general diode; color emission material; degradation effects; device electrical characteristics; display devices lifetime analysis; forward current; luminance degradation; luminance transition; minority carrier lifetime; optical measurement; organic light emitting diode; reverse current; reverse recovery time; storage time; thermal degradation; time 121 ns; time 9 mus to 12 mus; time 90 ns; transient equation; transient response; Charge carrier lifetime; Charge carrier processes; Current measurement; Degradation; Organic light emitting diodes; Time measurement; Transient analysis; OLED; minority carrier lifetime; reverse recovery;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-0837-3
Type :
conf
DOI :
10.1109/IMFEDK.2012.6218618
Filename :
6218618
Link To Document :
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