Growth of ZnO nanowires without catalyst on porous silicon

In this work, a simple way of growing high quality ZnO nanowire on PS substrate by thermal evaporation technique without application of catalyst is discussed. The PS was generated by electrochemical anodization method using n-type Si (lOO)wafer. During electrochemical etching process, constant current density, J=25 m/cm has been applied in the electrolyte consisting of aqueous Hydro-fluoride acid, HF and ethanol C₂H₅OH (1-4). After etching, the PS samples rinsed in deionized water, and dried in ambient air. The ZnO nanowires were synthesized on the PS in quartz tube furnace with temperatures ranging from 450 to 850 °C under flowing wet oxygen with 300 seem and Argon was used as carrier gas.