DocumentCode
2332810
Title
The growth of Sn doped ZnO nanobelts and their properties
Author
Tiong, T.Y. ; Ismardi, Abrar ; Yahya, M. ; Dee, C.F. ; Majlis, B. Yeop
Author_Institution
Fac. of Sci. & Technol., Univ. Kebangsaan Malaysia (UKM), Bangi, Malaysia
fYear
2010
fDate
1-3 Dec. 2010
Firstpage
1
Lastpage
2
Abstract
Sn doped ZnO nanobelts have been synthesized by using thermal evaporation method. Sn powder was mixed with the ZnO and graphite grain powder as the growth reactant for obtaining doped ZnO nanobelts. This nanobelts was prepared under nitrogen ambient and at temperature 1000°C. The nanobelts formed were observed under X-ray diffraction (XRD), scanning electron microscope (SEM) and analysis of its electrical and optical properties also was determined. The growth mechanisms of the Sn doped ZnO nanobelt and its potential applications are further discussed.
Keywords
II-VI semiconductors; X-ray diffraction; evaporation; nanobelts; nanofabrication; scanning electron microscopy; semiconductor growth; tin; wide band gap semiconductors; zinc compounds; SEM; X-ray diffraction; XRD; ZnO:Sn; doped nanobelts; electrical properties; graphite grain powder; growth reactant; optical properties; scanning electron microscopy; thermal evaporation;
fLanguage
English
Publisher
ieee
Conference_Titel
Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4244-8853-7
Type
conf
DOI
10.1109/ESCINANO.2010.5701002
Filename
5701002
Link To Document