Title :
Band structure calculation of strained graphene on hexagonal boron nitride
Author :
Ohmi, Takeshi ; Kamakura, Yoshinari
Author_Institution :
Grad. Sch. of Eng., Osaka Univ., Suita, Japan
Abstract :
The band structure of the graphene on hexagonal boron nitride system are calculated with the ab-initio method, and the dependence on the stress applied to the direction perpendicular to the sheet are investigated. It is shown that there exists an optimal stress condition for widening the band gap of the graphene, which could greatly improve the transistor on/off ratio, while sacrificing the good on-current performance.
Keywords :
boron compounds; energy gap; field effect transistors; graphene; stress analysis; BN; C; ab-initio method; band gap; band structure calculation; field-effect transistor; hexagonal boron nitride system; optimal stress condition; strained graphene; stress dependence; transistor on-off ratio; Boron; Educational institutions; Logic gates; Materials; Photonic band gap; Stress; Transistors;
Conference_Titel :
Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for
Conference_Location :
Osaka
Print_ISBN :
978-1-4673-0837-3
DOI :
10.1109/IMFEDK.2012.6218625
