Title :
Study of the properties of indium doped ZnO nanowires
Author :
Ismardi, Abrar ; Tiong, Teck Yaw ; Dee, Chang Fu ; Majlis, Burhanuddin Yeop
Author_Institution :
Inst. of Microengineering & Nanoelectron. (IMEN), Univ. Kebangsaan Malaysia, Bangi, Malaysia
Abstract :
Indium doped ZnO nanowires were synthesized by carbothermal reduction method in a quartz tube. The nanowires were characterized by FESEM for morphological structure, the results showed a hexagonal structure with diameter around 40 - 100 nm, and lengths from hundreds of nanometers to a few microns. EDX was also used for materials composition and all the composition were found in the spectrum. XRD was then used for checking crystallinity of the structure. ZnO nanowires were than measured for electrical properties. The results show that the indium doped ZnO nanowires has lower resistivity compare to the undoped ZnO nanowires. Gas sensing characterization has also been performed.
Keywords :
II-VI semiconductors; X-ray chemical analysis; X-ray diffraction; crystal structure; electrical resistivity; field emission electron microscopy; gas sensors; indium; nanofabrication; nanowires; reduction (chemical); scanning electron microscopy; semiconductor growth; semiconductor quantum wires; wide band gap semiconductors; zinc compounds; EDX; FESEM; XRD; ZnO:In; carbothermal reduction method; crystallinity; electrical properties; gas sensing; hexagonal structure; nanowires; quartz tube; resistivity;
Conference_Titel :
Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-8853-7
DOI :
10.1109/ESCINANO.2010.5701006
