Study of the properties of indium doped ZnO nanowires

Author

Ismardi, Abrar ; Tiong, Teck Yaw ; Dee, Chang Fu ; Majlis, Burhanuddin Yeop

Author_Institution

Inst. of Microengineering & Nanoelectron. (IMEN), Univ. Kebangsaan Malaysia, Bangi, Malaysia

fYear

2010

fDate

1-3 Dec. 2010

Firstpage

1

Lastpage

1

Abstract

Indium doped ZnO nanowires were synthesized by carbothermal reduction method in a quartz tube. The nanowires were characterized by FESEM for morphological structure, the results showed a hexagonal structure with diameter around 40 - 100 nm, and lengths from hundreds of nanometers to a few microns. EDX was also used for materials composition and all the composition were found in the spectrum. XRD was then used for checking crystallinity of the structure. ZnO nanowires were than measured for electrical properties. The results show that the indium doped ZnO nanowires has lower resistivity compare to the undoped ZnO nanowires. Gas sensing characterization has also been performed.

Keywords

II-VI semiconductors; X-ray chemical analysis; X-ray diffraction; crystal structure; electrical resistivity; field emission electron microscopy; gas sensors; indium; nanofabrication; nanowires; reduction (chemical); scanning electron microscopy; semiconductor growth; semiconductor quantum wires; wide band gap semiconductors; zinc compounds; EDX; FESEM; XRD; ZnO:In; carbothermal reduction method; crystallinity; electrical properties; gas sensing; hexagonal structure; nanowires; quartz tube; resistivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4244-8853-7

Type

conf

DOI

10.1109/ESCINANO.2010.5701006

Filename

5701006