Title :
Ground plane influence on enhanced dynamic threshold UTBB SOI nMOSFETs
Author :
Sasaki, K.R.A. ; Manini, M.B. ; Martino, Joao Antonio ; Aoulaiche, Marc ; Simoen, Eddy ; Witters, L. ; Claeys, Cor
Author_Institution :
LSI, Univ. of Sao Paulo, Sao Paulo, Brazil
Abstract :
This paper investigates the ground plane influence on Ultra Thin Body and Buried Oxide (UTBB) FDSOI devices applied in a dynamic threshold voltage (DT) operation (VB=VG) over the conventional one (VB=0V). The ground plane in enhanced DT (eDT), where the back gate bias is a multiple value of the front gate one (VB=k×VG) and the inverse eDT mode (VG=k×VB) were also considered and compared to the other configurations. The presence of the Ground Plane region in all DT configurations results in superior DC parameters like on-current/off-current ratio, a steeper subthreshold slope and a higher transconductance.
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; nMOSFET; ultra thin body and buried oxide FDSOI devices; Conferences; Couplings; Logic gates; MOSFET; Silicon-on-insulator; Threshold voltage; Transconductance; DTMOS; UTBB; ground plane;
Conference_Titel :
Devices, Circuits and Systems (ICCDCS), 2014 International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4799-4684-6
DOI :
10.1109/ICCDCS.2014.7016149