118GHz CMOS amplifier with group delay variation of 11.2ps and 3dB bandwidth of 20.4GHz

Author

Orii, Akihiko ; Katayama, Kosuke ; Motoyoshi, Mizuki ; Takano, Kyoya ; Fujishima, Minoru

Author_Institution

Sch. of Eng., Hiroshima Univ., Higashi-Hiroshima, Japan

fYear

2012

fDate

9-11 May 2012

Firstpage

1

Lastpage

2

Abstract

In this paper, we report the design of an amplifier with a flat group delay and gain for use in a high-speed D-band wireless transceiver without a group delay equalizer. Compared with a conventional amplifier with a group delay equalizer, the amplifier have achieved a decrease in the power consumption and an increase in the communication speed. The peak gain is 8.1dB at 118.6GHz with a power consumption of 19.8mW. The 3dB bandwidth is 20.4dB with a group delay variation of 43.3 to 65.8ps.

Keywords

CMOS integrated circuits; low noise amplifiers; millimetre wave amplifiers; millimetre wave integrated circuits; radio transceivers; CMOS amplifier; LNA; bandwidth 20.4 GHz; communication speed; flat group delay; frequency 118 GHz; frequency 118.6 GHz; gain 8.1 dB; group delay variation; high-speed D-band wireless transceiver; low-noise amplifier; power 19.8 mW; time 11.2 ps; time 43.3 ps to 65.8 ps; CMOS integrated circuits; Delay; Educational institutions; Gain; Impedance; Power demand; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Future of Electron Devices, Kansai (IMFEDK), 2012 IEEE International Meeting for

Conference_Location

Osaka

Print_ISBN

978-1-4673-0837-3

Type

conf

DOI

10.1109/IMFEDK.2012.6218630

Filename

6218630