Title :
The influence of body-tied and floating-body structure in Double Gate Vertical n-MOSFET
Author :
Alias, Nurul Ezaila ; Riyadi, Munawar A. ; Abdullah, Khalidah ; Ismail, Razali
Author_Institution :
Comput. Nanoelectron. (CoNE) Res. Group, Univ. Teknol. Malaysia, Skudai, Malaysia
Abstract :
The purpose of this paper is to focus on the different structure between body-tied and floating-body in DG Vertical n-MOSFET. A body-tied structure as shown in Fig. 1(a) means the channel area directly connected to the bottom surface (grounding) of the device structure in DG Vertical n-MOSFET. This device has smaller potential barrier around the source corner than the comparable structure. Whilst for floating-body as shown in Fig. 1(b), the channel area not connected to the bottom surface of the device structure, it is contactless to the ground and floated on the source junction. It is predicted that these two different device structures will influence the SCEs.
Keywords :
MOSFET; leakage currents; body-tied structure; device structure; double gate vertical n-MOSFET; floating-body structure;
Conference_Titel :
Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-8853-7
DOI :
10.1109/ESCINANO.2010.5701010
