DocumentCode
2332948
Title
The influence of body-tied and floating-body structure in Double Gate Vertical n-MOSFET
Author
Alias, Nurul Ezaila ; Riyadi, Munawar A. ; Abdullah, Khalidah ; Ismail, Razali
Author_Institution
Comput. Nanoelectron. (CoNE) Res. Group, Univ. Teknol. Malaysia, Skudai, Malaysia
fYear
2010
fDate
1-3 Dec. 2010
Firstpage
1
Lastpage
2
Abstract
The purpose of this paper is to focus on the different structure between body-tied and floating-body in DG Vertical n-MOSFET. A body-tied structure as shown in Fig. 1(a) means the channel area directly connected to the bottom surface (grounding) of the device structure in DG Vertical n-MOSFET. This device has smaller potential barrier around the source corner than the comparable structure. Whilst for floating-body as shown in Fig. 1(b), the channel area not connected to the bottom surface of the device structure, it is contactless to the ground and floated on the source junction. It is predicted that these two different device structures will influence the SCEs.
Keywords
MOSFET; leakage currents; body-tied structure; device structure; double gate vertical n-MOSFET; floating-body structure;
fLanguage
English
Publisher
ieee
Conference_Titel
Enabling Science and Nanotechnology (ESciNano), 2010 International Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4244-8853-7
Type
conf
DOI
10.1109/ESCINANO.2010.5701010
Filename
5701010
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